SIR624 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 5.7A/18.6A PPAK
| Part | FET Type | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 60 mOhm | MOSFET (Metal Oxide) | 1110 pF | 4 V | 5 W 52 W | PowerPAK® SO-8 | 30 nC | 10 V | 7.5 V | Surface Mount | 5.7 A 18.6 A | -55 °C | 150 °C | 200 V | 20 V | PowerPAK® SO-8 |
 Vishay General Semiconductor - Diodes Division | N-Channel | 60 mOhm | MOSFET (Metal Oxide) | 1110 pF | 4 V | 52 W | PowerPAK® SO-8 | 23 nC | 10 V | 7.5 V | Surface Mount | 18.6 A | -55 °C | 150 °C | 200 V | 20 V | PowerPAK® SO-8 |