Specification	AFGHL50T65RQDN

Current - Collector (Ic) (Max) [Max]	78 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	65 nC
Grade	Automotive
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	346 W
Qualification	AEC-Q101
Reverse Recovery Time (trr)	57 ns
Supplier Device Package	TO-247-3
Switching Energy	3.09 mJ, 0.00083 J
Td (on/off) @ 25°C	41 ns, 76 ns
Test Condition	50 A, 2.5 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic	1.81 V
Voltage - Collector Emitter Breakdown (Max)	650 V

AFGHL50T65RQDN Series

IGBT - 650 V 50 A - Short circuit rated FS4 - Automotive qualified

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Grade	Reverse Recovery Time (trr)	Test Condition	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Gate Charge	Supplier Device Package	Power - Max [Max]	Package / Case	Qualification	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C
ON Semiconductor AFGHL50T65RQDN	1.81 V	Through Hole	Automotive	57 ns	2.5 Ohm 15 V 50 A 400 V	200 A	-55 °C	175 ░C	Field Stop	65 nC	TO-247-3	346 W	TO-247-3	AEC-Q101	650 V	0.00083 J 3.09 mJ	78 A	41 ns 76 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.89
		30	$ 4.67
		120	$ 4.00
		510	$ 3.56
		1020	$ 3.04
		2010	$ 2.87
Newark	Each	250	$ 4.34
		500	$ 4.03
		1000	$ 3.79
ON Semiconductor	N/A	1	$ 2.93

Description

General part information

AFGHL50T65RQDN Series

Using novel field stop IGBT technology, ON Semiconductor’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses.