Zenode.ai Logo
Beta
SQ-MELF, A PKG
Discrete Semiconductor Products

JAN1N6622US/TR

Active
Microchip Technology

DIODE GEN PURP 660V 1.2A D-5A

Deep-Dive with AI

Search across all available documentation for this part.

SQ-MELF, A PKG
Discrete Semiconductor Products

JAN1N6622US/TR

Active
Microchip Technology

DIODE GEN PURP 660V 1.2A D-5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N6622US/TR
Capacitance @ Vr, F10 pF
Current - Average Rectified (Io)1.2 A
Current - Reverse Leakage @ Vr500 nA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
QualificationMIL-PRF-19500/585
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageD-5A
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]660 V
Voltage - Forward (Vf) (Max) @ If1.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 12.44
Microchip DirectN/A 1$ 13.40

Description

General part information

JAN1N6622US-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in axial-leaded packages for thrUS-hole mounting (see separate data sheet for 1N6620 thru 1N6625). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources