STP80NF55-06
ActiveMOSFET TRANSISTOR, N CHANNEL, 80 A, 55 V, 6.5 MOHM, 10 V, 3 V ROHS COMPLIANT: YES
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STP80NF55-06
ActiveMOSFET TRANSISTOR, N CHANNEL, 80 A, 55 V, 6.5 MOHM, 10 V, 3 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP80NF55-06 |
|---|---|
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
STP80NF55-06 Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources