Discrete Semiconductor Products

TSM9ND50CI

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TRANS MOSFET N-CH 500V 9A 3-PIN(3+TAB) ITO-220

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 500V 9A 3-PIN(3+TAB) ITO-220

Technical Specifications

Parameters and characteristics for this part

Specification	TSM9ND50CI

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1116 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	ITO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.8 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM9N90ECZ C0G	TO-220	72 nC	30 V	150 °C	-55 °C	TO-220-3	4 V	1.4 Ohm	MOSFET (Metal Oxide)	9 A	N-Channel	2470 pF	10 V	900 V	Through Hole
Taiwan Semiconductor Corporation TSM9N90ECI C0G	ITO-220AB	72 nC	30 V	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	4 V	1.4 Ohm	MOSFET (Metal Oxide)	9 A	N-Channel	2470 pF	10 V	900 V	Through Hole
Taiwan Semiconductor Corporation TSM9ND50CI	ITO-220	24.5 nC	30 V	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	3.8 V	900 mOhm	MOSFET (Metal Oxide)	9 A	N-Channel	1116 pF	10 V	500 V	Through Hole	50 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 9A (Tc) 50W (Tc) Through Hole ITO-220

Technical documentation and resources