TSM9 Series

Catalog

MOSFET N-CHANNEL 900V 9A TO220

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)
Taiwan Semiconductor Corporation TSM9N90ECZ C0G	TO-220	72 nC	30 V	150 °C	-55 °C	TO-220-3	4 V	1.4 Ohm	MOSFET (Metal Oxide)	9 A	N-Channel	2470 pF	10 V	900 V	Through Hole
Taiwan Semiconductor Corporation TSM9N90ECI C0G	ITO-220AB	72 nC	30 V	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	4 V	1.4 Ohm	MOSFET (Metal Oxide)	9 A	N-Channel	2470 pF	10 V	900 V	Through Hole
Taiwan Semiconductor Corporation TSM9ND50CI	ITO-220	24.5 nC	30 V	150 °C	-55 °C	TO-220-3 Full Pack Isolated Tab	3.8 V	900 mOhm	MOSFET (Metal Oxide)	9 A	N-Channel	1116 pF	10 V	500 V	Through Hole	50 W