Specification	NVH4L030N120M3S

Current - Continuous Drain (Id) @ 25°C	73 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	107 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2430 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	313 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	39 mOhm
Supplier Device Package	TO-247-4L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.4 V

NVH4L030N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Grade	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Qualification	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor NVH4L030N120M3S	-55 °C	175 ░C	Through Hole	313 W	39 mOhm	18 V	TO-247-4L	SiC (Silicon Carbide Junction Transistor)	Automotive	2430 pF	73 A	1200 V	TO-247-4	107 nC	-10 V	22 V	AEC-Q101	N-Channel	4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 18.99
		10	$ 17.01
		30	$ 15.90
Digikey	Tube	1	$ 24.42
		30	$ 20.25
		120	$ 18.98
		510	$ 16.20
Newark	Each	250	$ 17.04
ON Semiconductor	N/A	1	$ 16.70

Description

General part information

NVH4L030N120M3S Series

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.