NVH4L030N120M3S Series

Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Grade	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Qualification	FET Type	Vgs(th) (Max) @ Id
ON Semiconductor NVH4L030N120M3S	-55 °C	175 ░C	Through Hole	313 W	39 mOhm	18 V	TO-247-4L	SiC (Silicon Carbide Junction Transistor)	Automotive	2430 pF	73 A	1200 V	TO-247-4	107 nC	-10 V	22 V	AEC-Q101	N-Channel	4.4 V

Catalog

Silicon Carbide (SiC) MOSFET- EliteSiC, 30 mohm, 1200 V, M3S, TO247-4L

Key Features

• Typical RDS(on) = 29mΩ at Vgs =18V, Id = 30A

• Qualified for Automotive According to AEC−Q101

• New M3S technology: 28.5mohm RDS(ON) with low EON and EOFF losses

• 15V to 18V Gate Drive

• Devices are Pb−Free and are RoHS Compliant

Description

EliteSiC MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.