Discrete Semiconductor Products

S30760

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DIODE GEN PURP 600V 85A DO5

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S30760

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

Part	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Technology	Package / Case	Mounting Type
Microchip Technology S30760	DO-5	200 C	-65 C	85 A	600 V	25 µA	200 mA 500 ns	Standard	DO-203AB DO-5 Stud	Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 45.35

General part information

Diode 600 V 85A Stud Mount DO-5

Technical documentation and resources

No documents available