Discrete Semiconductor Products

APT34F100L

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TRANS MOSFET N-CH 1KV 35A 3-PIN(3+TAB) TO-264

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 1KV 35A 3-PIN(3+TAB) TO-264

Technical Specifications

Parameters and characteristics for this part

Specification	APT34F100L

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	305 nC
Input Capacitance (Ciss) (Max) @ Vds	9835 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1135 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-264 [L]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Microchip Technology APT34F100L	1135 W	N-Channel	1000 V	305 nC	30 V	-55 °C	150 °C	400 mOhm	35 A	Through Hole	MOSFET (Metal Oxide)	5 V	10 V	TO-264-3 TO-264AA	TO-264 [L]	9835 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	25	$ 23.50

General part information

Fast switching with low EMI

Low trr for high reliability

Ultra low Crss for improved noise immunity

Technical documentation and resources