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TO-263
Discrete Semiconductor Products

FDB390N15A

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 27A, 39MΩ

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TO-263
Discrete Semiconductor Products

FDB390N15A

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 150V, 27A, 39MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB390N15A
Current - Continuous Drain (Id) @ 25°C27 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1285 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs39 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.82
10$ 1.83
100$ 1.26
Digi-Reel® 1$ 2.82
10$ 1.83
100$ 1.26
Tape & Reel (TR) 800$ 0.87
NewarkEach (Supplied on Full Reel) 1$ 1.17
3000$ 1.10
6000$ 1.05
12000$ 0.94
18000$ 0.91
30000$ 0.87
ON SemiconductorN/A 1$ 0.80

Description

General part information

FDB390N15A Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.