FDB390N15A Series

N-Channel PowerTrench® MOSFET 150V, 27A, 39mΩ

Catalog

N-Channel PowerTrench® MOSFET 150V, 27A, 39mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDB390N15A	18.6 nC	75 W	20 V	MOSFET (Metal Oxide)	27 A	1285 pF	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	39 mOhm	Surface Mount	10 V	N-Channel	4 V	TO-263 (D2PAK)	-55 °C	175 ░C

Catalog

N-Channel PowerTrench® MOSFET 150V, 27A, 39mΩ

Key Features

• RDS(on)= 33.5mΩ ( Typ.)@ VGS= 10V, ID= 27A

• Fast Switching Speed

• Low Gate Charge, QG= 14.3nC ( Typ.)

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant

Description

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.