Discrete Semiconductor Products

FDD2512

Obsolete

MOSFET N-CH 150V 6.7A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 6.7A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	FDD2512

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	344 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	42 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
ON Semiconductor FDD2512	4 V	344 pF	6 V 10 V	N-Channel	TO-252 (DPAK)	11 nC	-55 °C	175 ░C	42 W	6.7 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	20 V	150 V	420 mOhm
ON Semiconductor FDD2512	4 V	344 pF	6 V 10 V	N-Channel	TO-252AA	11 nC	-55 °C	175 ░C	42 W	6.7 A	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	20 V	150 V	420 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 6.7A (Ta) 42W (Ta) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available