FDD251 Series
Manufacturer: ON Semiconductor
Beta
⌘K
MOSFET N-CH 150V 6.7A TO252
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 4 V | 344 pF | 6 V 10 V | N-Channel | TO-252 (DPAK) | 11 nC | -55 °C | 175 ░C | 42 W | 6.7 A | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 20 V | 150 V | 420 mOhm |
ON Semiconductor | 4 V | 344 pF | 6 V 10 V | N-Channel | TO-252AA | 11 nC | -55 °C | 175 ░C | 42 W | 6.7 A | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 20 V | 150 V | 420 mOhm |