Zenode.ai Logo
Beta
Log InSign Up
TO-78-6
Discrete Semiconductor Products

JANTX2N2919

Active
Microchip Technology

TRANS GP BJT NPN 60V 0.03A 350MW 6-PIN TO-78

Deep-Dive with AI

Search across all available documentation for this part.

Documents2N2919_2N2920_L_U Radiation Hardened NPN Silicon Dual Transistor
TO-78-6
Discrete Semiconductor Products

JANTX2N2919

Active
Microchip Technology

TRANS GP BJT NPN 60V 0.03A 350MW 6-PIN TO-78

Deep-Dive with AI

Documents2N2919_2N2920_L_U Radiation Hardened NPN Silicon Dual Transistor

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N2919
Current - Collector (Ic) (Max) [Max]30 mA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature200 °C
Package / CaseTO-78-6 Metal Can
QualificationMIL-PRF-19500/355
Supplier Device PackageTO-78-6
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 34.40
Microchip DirectN/A 1$ 37.04

Description

General part information

JANTX2N2919-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon 2N2919 and 2N2920, unitized transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/355, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die), as specified in MIL-PRF-19500/355. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G" and "H") are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels.