Discrete Semiconductor Products

MJD32CT4

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TRANSISTOR, BJT, PNP, -100V, -3A, TO-252

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Discrete Semiconductor Products

Active

TRANSISTOR, BJT, PNP, -100V, -3A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	MJD32CT4

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	15 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Transistor Type	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case
STMicroelectronics MJD32CT4	3 A	10	15 W	50 µA	Surface Mount	100 V	150 °C	PNP	DPAK	1.2 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

Bipolar (BJT) Transistor PNP 100 V 3 A 15 W Surface Mount DPAK

Technical documentation and resources