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DFN2020MD-6
Discrete Semiconductor Products

PMPB23XNEAX

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Freescale Semiconductor - NXP

TRANS MOSFET N-CH 20V 7A 6-PIN DFN-MD EP T/R AUTOMOTIVE AEC-Q101

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DFN2020MD-6
Discrete Semiconductor Products

PMPB23XNEAX

Active
Freescale Semiconductor - NXP

TRANS MOSFET N-CH 20V 7A 6-PIN DFN-MD EP T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB23XNEAX
Current - Continuous Drain (Id) @ 25°C7 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1136 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.7 W, 12.5 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]22 mOhm
Supplier Device PackageDFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.10

Description

General part information

PMPB23XNEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.