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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Qualification | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 22 mOhm | 900 mV | 1136 pF | 7 A | Surface Mount | 1.7 W 12.5 W | 1.8 V 4.5 V | Automotive | 12 V | DFN2020MD-6 | 20 V | AEC-Q101 | 6-UDFN Exposed Pad | N-Channel | 17 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C |