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6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA507PZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 7.8 A, 0.019 OHM, MICROFET, SURFACE MOUNT

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6-WDFN Exposed Pad
Discrete Semiconductor Products

FDMA507PZ

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 20 V, 7.8 A, 0.019 OHM, MICROFET, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA507PZ
Current - Continuous Drain (Id) @ 25°C7.8 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]42 nC
Input Capacitance (Ciss) (Max) @ Vds2015 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.66
10$ 1.05
100$ 0.70
500$ 0.55
1000$ 0.50
Digi-Reel® 1$ 1.66
10$ 1.05
100$ 0.70
500$ 0.55
1000$ 0.50
Tape & Reel (TR) 3000$ 0.44
6000$ 0.41
9000$ 0.40
NewarkEach (Supplied on Full Reel) 3000$ 0.46
3000$ 0.46
6000$ 0.45
6000$ 0.45
12000$ 0.44
12000$ 0.44
ON SemiconductorN/A 1$ 0.19

Description

General part information

FDMA507PZ Series

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.