Discrete Semiconductor Products

NSS40301MZ4T1G

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 3 A, 2 W, SOT-223, SURFACE MOUNT

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +2

Discrete Semiconductor Products

NSS40301MZ4T1G

Active

ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 3 A, 2 W, SOT-223, SURFACE MOUNT

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +2

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NSS40301MZ4T1G

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	215 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223 (TO-261)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

NSS40301MZ4 Series

3.0 A, 40 V Low V<sub>CE(sat)</sub> NPN Power Bipolar Junction Transistor

Part	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Qualification
ON Semiconductor NSV40301MDR2G	653 mW	180	100 nA	2 NPN (Dual)	40 V	Surface Mount	3 A	100 MHz	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	8-SOIC	115 mV
ON Semiconductor NSV40301MZ4T1G	800 mW	200 hFE	100 nA	NPN		Surface Mount	3 A	215 MHz	TO-261-4 TO-261AA			-55 °C	150 °C	SOT-223 (TO-261)	200 mV	40 V
ON Semiconductor NSS40301MZ4T1G	2 W	200 hFE	100 nA	NPN		Surface Mount	3 A	215 MHz	TO-261-4 TO-261AA			-55 °C	150 °C	SOT-223 (TO-261)	200 mV	40 V
ON Semiconductor NSV40301MZ4T3G	2 W	220 hFE	100 nA	NPN		Surface Mount	3 A	215 MHz	TO-261-4 TO-261AA			-55 °C	150 °C	SOT-223 (TO-261)	200 mV	40 V	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.82
		10	$ 0.51
		100	$ 0.33
		500	$ 0.25
	Digi-Reel®	1	$ 0.82
		10	$ 0.51
		100	$ 0.33
		500	$ 0.25
	Tape & Reel (TR)	1000	$ 0.23
		2000	$ 0.21
		3000	$ 0.19
		5000	$ 0.18
		7000	$ 0.18
		10000	$ 0.17
		25000	$ 0.15
		50000	$ 0.15
Newark	Each (Supplied on Cut Tape)	500	$ 0.25
ON Semiconductor	N/A	1	$ 0.16

Description

General part information

NSS40301MZ4 Series

ON Semiconductor e2 PowerEdge family of Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-0.0318-SOT-223 (TO-261) 4 LEAD

Package Drawing