NSS40301MZ4 Series
3.0 A, 40 V Low V<sub>CE(sat)</sub> NPN Power Bipolar Junction Transistor
Manufacturer: ON Semiconductor
Catalog
3.0 A, 40 V Low V<sub>CE(sat)</sub> NPN Power Bipolar Junction Transistor
Key Features
• Low Collector-Emitter Saturation Voltage
• High DC Current Gain
• High Current-Gain Bandwidth Product
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• NSS40300MZ4 is PNP complimentary device
• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
Description
AI
ON Semiconductor e2 PowerEdge family of Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.