Isolators

MOC207R1VM

Obsolete

ON Semiconductor

OPTOISO 2.5KV TRANS W/BASE 8SOIC

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Isolators

MOC207R1VM

Obsolete

ON Semiconductor

OPTOISO 2.5KV TRANS W/BASE 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MOC207R1VM

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	150 mA
Current Transfer Ratio (Max)	200 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	3.2 µs
Rise / Fall Time (Typ) [custom]	4.7 µs
Supplier Device Package	8-SOIC
Turn On / Turn Off Time (Typ)	7.5 µs, 5.7 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Isolation	2500 Vrms
Voltage - Output (Max) [Max]	30 V

MOC207M Series

8-pin SOIC Single-Channel Phototransistor Output Optocoupler

Part	Mounting Type	Voltage - Forward (Vf) (Typ)	Voltage - Output (Max) [Max]	Current - Output / Channel	Vce Saturation (Max) [Max]	Number of Channels	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Min) [Min]	Current Transfer Ratio (Max)	Voltage - Isolation	Input Type	Current - DC Forward (If) (Max) [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Turn On / Turn Off Time (Typ)	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor MOC207R1VM	Surface Mount	1.15 V	30 V	150 mA	400 mV	1	3.2 µs	4.7 µs	100 %	200 %	2500 Vrms	DC	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	5.7 µs 7.5 µs	100 °C	-40 °C
ON Semiconductor MOC207M	Surface Mount	1.15 V	30 V	150 mA	400 mV	1	3.2 µs	4.7 µs	100 %	200 %	2500 Vrms	DC	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	5.7 µs 7.5 µs	100 °C	-40 °C
ON Semiconductor MOC207R2VM	Surface Mount	1.15 V	30 V	150 mA	400 mV	1	3.2 µs	4.7 µs	100 %	200 %	2500 Vrms	DC	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	5.7 µs 7.5 µs	100 °C	-40 °C
ON Semiconductor MOC207M_F132	Surface Mount	1.15 V	30 V	150 mA	400 mV	1	3.2 µs	4.7 µs	100 %	200 %	2500 Vrms	DC	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	5.7 µs 7.5 µs	100 °C	-40 °C
ON Semiconductor MOC207R2M	Surface Mount	1.15 V	30 V	150 mA	400 mV	1	3.2 µs	4.7 µs	100 %	200 %	2500 Vrms	DC	60 mA	8-SOIC	8-SOIC	3.9 mm	0.154 in	5.7 µs 7.5 µs	100 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MOC207M Series

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.

Documents

Technical documentation and resources