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8-PowerWDFN
Discrete Semiconductor Products

SIZ980BDT-T1-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

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8-PowerWDFN
Discrete Semiconductor Products

SIZ980BDT-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIZ980BDT-T1-GE3
Configuration2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C23.7 A, 54.3 A, 197 A, 54.8 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC, 79 nC
Input Capacitance (Ciss) (Max) @ Vds790 pF, 3655 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power - Max5 W, 66 W, 20 W, 3.8 W
Rds On (Max) @ Id, Vgs4.39 mOhm, 1.06 mOhm
Supplier Device Package8-PowerPair® (6x5)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.59
10$ 1.30
100$ 1.01
500$ 0.86
1000$ 0.70
Digi-Reel® 1$ 1.59
10$ 1.30
100$ 1.01
500$ 0.86
1000$ 0.70
Tape & Reel (TR) 3000$ 0.60

Description

General part information

SIZ980 Series

Mosfet Array 30V 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Surface Mount 8-PowerPair® (6x5)

Documents

Technical documentation and resources