SIZ980 Series

Catalog

MOSFET 2N-CH 30V 20A 8PWRPAIR

Part	Technology	Vgs(th) (Max) @ Id [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Min]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Power - Max
Vishay General Semiconductor - Diodes Division SIZ980DT-T1-GE3	MOSFET (Metal Oxide)	2.2 V	Surface Mount	930 pF 4600 pF	20 A 60 A	8-PowerPair® (6x5)	-55 °C	150 °C	2 N-Channel (Dual) Schottky	35 nC	8.1 nC	20 W	66 W	1.6 mOhm 6.7 mOhm	8-PowerWDFN	30 V
Vishay General Semiconductor - Diodes Division SIZ980BDT-T1-GE3	MOSFET (Metal Oxide)	2.2 V	Surface Mount	790 pF 3655 pF	23.7 A 54.3 A 54.8 A 197 A	8-PowerPair® (6x5)	-55 °C	150 °C	2 N-Channel (Dual) Schottky		18 nC 79 nC			1.06 mOhm 4.39 mOhm	8-PowerWDFN	30 V	3.8 W 5 W 20 W 66 W