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DocumentsGUNN Diodes Cathode MG1001 - MG1060
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DocumentsGUNN Diodes Cathode MG1001 - MG1060
Technical Specifications
Parameters and characteristics for this part
| Specification | MG1010-M11 |
|---|---|
| Current - Max [Max] | 800 mA |
| Diode Type | PIN - Single |
| Package / Case | Stud |
| Power Dissipation (Max) [Max] | 100 mW |
| Voltage - Peak Reverse (Max) [Max] | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 406.57 | |
| 50 | $ 390.04 | |||
| 100 | $ 366.91 | |||
| 250 | $ 350.39 | |||
| 500 | $ 337.17 | |||
| 1000 | $ 330.55 | |||
Description
General part information
Ku-Band-Gunn Series
GaAs Gunn diodes epi-down are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using propriety techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9-95 GHz.
Documents
Technical documentation and resources