
L6384ED
ActiveIGBT/MOSFET DRIVER, 2 CHANNELS, HALF BRIDGE, 650 MA, 16.6 V, 250 NS, 8 PINS, SOIC

L6384ED
ActiveIGBT/MOSFET DRIVER, 2 CHANNELS, HALF BRIDGE, 650 MA, 16.6 V, 250 NS, 8 PINS, SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | L6384ED |
|---|---|
| Channel Type | Synchronous |
| Current - Peak Output (Source, Sink) [custom] | 400 mA |
| Current - Peak Output (Source, Sink) [custom] | 650 mA |
| Driven Configuration | Half-Bridge |
| Gate Type | N-Channel MOSFET, IGBT, MOSFET (N-Channel) |
| High Side Voltage - Max (Bootstrap) [Max] | 600 V |
| Input Type | Inverting |
| Logic Voltage - VIL, VIH [custom] | 1.5 V |
| Logic Voltage - VIL, VIH [custom] | 3.6 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -45 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Rise / Fall Time (Typ) | 50 ns, 30 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 16.6 V |
| Voltage - Supply [Min] | 14.6 V |
L6384 Series
High voltage high and low side driver with bootstrap diode
| Part | Gate Type | Supplier Device Package | Input Type | Number of Drivers | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | High Side Voltage - Max (Bootstrap) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Channel Type | Driven Configuration | Voltage - Supply [Min] | Voltage - Supply [Max] | Rise / Fall Time (Typ) | Package / Case | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-SOIC | Inverting | 2 | 1.5 V | 3.6 V | 600 V | -45 °C | 125 ¯C | Surface Mount | 400 mA | 650 mA | Synchronous | Half-Bridge | 14.6 V | 16.6 V | 30 ns 50 ns | 0.154 in | 8-SOIC | 3.9 mm |
STMicroelectronics | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-DIP | Inverting | 2 | 1.5 V | 3.6 V | 600 V | -45 °C | 125 ¯C | Through Hole | 400 mA | 650 mA | Synchronous | Half-Bridge | 14.6 V | 16.6 V | 30 ns 50 ns | 8-DIP (0.300" 7.62mm) | ||
STMicroelectronics | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-SOIC | Inverting | 2 | 1.5 V | 3.6 V | 600 V | -45 °C | 125 ¯C | Surface Mount | 400 mA | 650 mA | Synchronous | Half-Bridge | 14.6 V | 16.6 V | 30 ns 50 ns | 0.154 in | 8-SOIC | 3.9 mm |
STMicroelectronics | IGBT MOSFET (N-Channel) N-Channel MOSFET | 8-SOIC | Inverting | 2 | 1.5 V | 3.6 V | 600 V | -45 °C | 125 ¯C | Surface Mount | 400 mA | 650 mA | Synchronous | Half-Bridge | 14.6 V | 16.6 V | 30 ns 50 ns | 0.154 in | 8-SOIC | 3.9 mm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3937 | $ 1.56 | |
| Tube | 1 | $ 2.40 | ||
| 10 | $ 1.54 | |||
| 25 | $ 1.32 | |||
| 100 | $ 1.07 | |||
| 250 | $ 0.94 | |||
| 500 | $ 0.87 | |||
| 1000 | $ 0.80 | |||
| 2500 | $ 0.74 | |||
| 5000 | $ 0.70 | |||
Description
General part information
L6384 Series
The L6384E is a high voltage gate driver, manufactured with the BCD™ "offline" technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to single input configuration. Further prevention from outputs cross conduction is guaranteed by the deadtime function, tunable by the user through an external resistor connected to the DT/SD pin.
The L6384E device has one input pin, one enable pin (DT/SD) and two output pins, and guarantees matched delays between low-side and high-side sections, thus simplifying device's high frequency operation. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The bootstrap diode is integrated inside the device, allowing a more compact and reliable solution.
The L6384E features the UVLO protection and a voltage clamp on the VCCsupply voltage. The voltage clamp is typically around 15.6 V and is useful in order to ensure a correct device functioning in cases where VCCsupply voltage is ramped up too slowly or is subject to voltage drops.
Documents
Technical documentation and resources