S3560PF

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DIODE GEN PURP 600V 35A DO21

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 35A DO21

Technical Specifications

Parameters and characteristics for this part

Specification	S3560PF

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Press Fit
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-208AA
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-21
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package
Microchip Technology S3560PF	Standard Recovery >500ns	200 mA	600 V	Press Fit	175 ░C	-55 C	DO-208AA	1 V	Standard	35 A	10 µA	DO-21
Microchip Technology S3560	Standard Recovery >500ns	200 mA	600 V	Stud Mount	200 C	-65 C	DO-203AB DO-5 Stud	1.25 V	Standard	70 A	25 µA	DO-5 (DO-203AB)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 52.19

General part information

Diode 600 V 35A Press Fit DO-21

Technical documentation and resources

No documents available