Specification	STL3N65M2

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	155 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	22 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	PowerFlat™ (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STL3N65M2 Series

Part	Power Dissipation (Max)	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Supplier Device Package
STMicroelectronics STL3N65M2	22 W	N-Channel	25 V	10 V	155 pF	4 V	2.3 A	8-PowerVDFN	650 V	1.8 Ohm	5 nC	Surface Mount	150 °C	-55 °C	MOSFET (Metal Oxide)	PowerFlat™ (3.3x3.3)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	661	$ 1.37
Newark	Each (Supplied on Cut Tape)	1	$ 1.25
		10	$ 0.81
		25	$ 0.72
		50	$ 0.63
		100	$ 0.54
		250	$ 0.49
		500	$ 0.45
		1000	$ 0.41

Description

General part information

STL3N65M2 Series

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.