Discrete Semiconductor Products

RFUS20NS6STL

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DIODE GEN PURP 600V 20A LPDS

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Discrete Semiconductor Products

Active

DIODE GEN PURP 600V 20A LPDS

Technical Specifications

Parameters and characteristics for this part

Specification	RFUS20NS6STL

Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	LPDS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.8 V

Part	Supplier Device Package	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Mounting Type	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
Rohm Semiconductor RFUS20NS4STL	LPDS	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	430 V	150 °C	Surface Mount	200 mA 500 ns
Rohm Semiconductor RFUS20TM6S	TO-220FN	TO-220-3 Full Pack	Standard	600 V	150 °C	Through Hole	200 mA 500 ns	35 ns	10 µA	2.8 V
Rohm Semiconductor RFUS20TM4S	TO-220FN	TO-220-3 Full Pack	Standard	430 V	150 °C	Through Hole	200 mA 500 ns	35 ns	10 µA	1.6 V
Rohm Semiconductor RFUS20NS6STL	LPDS	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Standard	600 V	150 °C	Surface Mount	200 mA 500 ns	35 ns	10 µA	2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 20A Surface Mount LPDS

Technical documentation and resources

No documents available