Discrete Semiconductor Products

RFUS20TM6S

NRND

DIODE GEN PURP 600V 20A TO220FN

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 600V 20A TO220FN

Technical Specifications

Parameters and characteristics for this part

Specification	RFUS20TM6S

Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Package / Case	TO-220-3 Full Pack
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220FN
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.8 V

Part	Supplier Device Package	Speed	Package / Case	Operating Temperature - Junction [Max]	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]
Rohm Semiconductor RFUS20NS4STL	LPDS	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	Standard	Surface Mount	430 V
Rohm Semiconductor RFUS20TM6S	TO-220FN	200 mA 500 ns	TO-220-3 Full Pack	150 °C	Standard	Through Hole	600 V	35 ns	10 µA	2.8 V
Rohm Semiconductor RFUS20TM4S	TO-220FN	200 mA 500 ns	TO-220-3 Full Pack	150 °C	Standard	Through Hole	430 V	35 ns	10 µA		1.6 V
Rohm Semiconductor RFUS20NS6STL	LPDS	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	Standard	Surface Mount	600 V	35 ns	10 µA	2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 20A Through Hole TO-220FN

Technical documentation and resources