Specification	SSM3J143TU,LXHF

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	840 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	500 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	29.8 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM3J143TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Technology	Qualification	Grade
Toshiba Semiconductor and Storage SSM3J143TU,LF	150 °C	840 pF	UFM	1 V	12.8 nC	20 V	5.5 A	-8 V 6 V	1.5 V 4.5 V	500 mW	Surface Mount	29.8 mOhm	P-Channel	MOSFET (Metal Oxide)
Toshiba Semiconductor and Storage SSM3J143TU,LXHF	150 °C	840 pF	UFM	1 V	12.8 nC	20 V	5.5 A	-8 V 6 V	1.5 V 4.5 V	500 mW	Surface Mount	29.8 mOhm	P-Channel	MOSFET (Metal Oxide)	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)

Technical documentation and resources