High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.5 A, 0.0298 Ω@4.5V, SOT-323F(UFM)
| Part | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Technology | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | 840 pF | UFM | 1 V | 12.8 nC | 20 V | 5.5 A | -8 V 6 V | 1.5 V 4.5 V | 500 mW | Surface Mount | 29.8 mOhm | P-Channel | MOSFET (Metal Oxide) | ||
 Toshiba Semiconductor and Storage | 150 °C | 840 pF | UFM | 1 V | 12.8 nC | 20 V | 5.5 A | -8 V 6 V | 1.5 V 4.5 V | 500 mW | Surface Mount | 29.8 mOhm | P-Channel | MOSFET (Metal Oxide) | AEC-Q101 | Automotive |