Discrete Semiconductor Products

FCU600N65S3R0

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, EASY DRIVE, 650 V, 6 A, 600 MΩ, IPAK

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Discrete Semiconductor Products

FCU600N65S3R0

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® III, EASY DRIVE, 650 V, 6 A, 600 MΩ, IPAK

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCU600N65S3R0

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	465 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max) [Max]	54 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	4.5 V

FCU600N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

Part	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCU600N65S3R0	N-Channel	54 W	-55 °C	150 °C	465 pF	6 A	MOSFET (Metal Oxide)	30 V	IPAK	4.5 V	TO-251-3 Stub Leads IPAK	Through Hole	650 V	600 mOhm	11 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.47
		75	$ 1.14
		150	$ 1.03

Description

General part information

FCU600N65S3R0 Series

SuperFET®III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation.

Documents

Technical documentation and resources