FCU600N65S3R0 Series

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

Part	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FCU600N65S3R0	N-Channel	54 W	-55 °C	150 °C	465 pF	6 A	MOSFET (Metal Oxide)	30 V	IPAK	4.5 V	TO-251-3 Stub Leads IPAK	Through Hole	650 V	600 mOhm	11 nC	10 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK

Key Features

• 700 V @ TJ= 150oC

• Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)

• Ultra Low Gate Charge (Typ. Qg= 11 nC)

• Optimized Capacitance

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on)= 493 mΩ

• Internal Gate Resistance: 0.9 Ω

Description

SuperFET®III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy-drive series helps manage EMI issues and allows for easier design implementation.