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Technical Specifications
Parameters and characteristics for this part
| Specification | BD239C |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1.77 | |
| 10 | $ 1.12 | |||
| 100 | $ 0.75 | |||
| 500 | $ 0.60 | |||
| 1000 | $ 0.54 | |||
| 2000 | $ 0.50 | |||
| 5000 | $ 0.45 | |||
| 10000 | $ 0.44 | |||
| N/A | 547 | $ 1.76 | ||
| 2619 | $ 0.77 | |||
Description
General part information
BD239C Series
The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is the BD240C.
Documents
Technical documentation and resources