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TO-252AA
Discrete Semiconductor Products

FQD30N06TM

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 60 V, 22.7 A, 45 MΩ, DPAK

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TO-252AA
Discrete Semiconductor Products

FQD30N06TM

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 60 V, 22.7 A, 45 MΩ, DPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFQD30N06TM
Current - Continuous Drain (Id) @ 25°C22.7 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds945 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)2.5 W, 44 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.65
10$ 1.05
100$ 0.70
500$ 0.55
1000$ 0.50
Digi-Reel® 1$ 1.65
10$ 1.05
100$ 0.70
500$ 0.55
1000$ 0.50
Tape & Reel (TR) 2500$ 0.45
5000$ 0.42
7500$ 0.42
NewarkEach (Supplied on Full Reel) 1$ 0.57
3000$ 0.55
6000$ 0.50
12000$ 0.45
18000$ 0.43
30000$ 0.42
ON SemiconductorN/A 1$ 0.44

Description

General part information

FQD30N06 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.