FQD30N06 Series

Power MOSFET, N-Channel, QFET®, 60 V, 22.7 A, 45 mΩ, DPAK

Catalog

Power MOSFET, N-Channel, QFET®, 60 V, 22.7 A, 45 mΩ, DPAK

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Mounting Type	FET Type
ON Semiconductor FQD30N06TM	4 V	10 V	60 V	945 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	25 V	25 nC	45 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	22.7 A	2.5 W 44 W	TO-252AA	Surface Mount	N-Channel

Catalog

Power MOSFET, N-Channel, QFET®, 60 V, 22.7 A, 45 mΩ, DPAK

Key Features

• 22.7A, 60V, RDS(on)= 45mΩ(Max.) @VGS= 10 V, ID= 11.4A

• Low gate charge ( Typ. 19nC)

• Low Crss( Typ. 40pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.