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MOSFET DRVR 1.2A 2-OUT Lo Side Inv 8-Pin SOIC N T/R
Integrated Circuits (ICs)

TC1426COA713

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Microchip Technology

MOSFET DRVR 1.2A 2-OUT LO SIDE INV 8-PIN SOIC N T/R

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MOSFET DRVR 1.2A 2-OUT Lo Side Inv 8-Pin SOIC N T/R
Integrated Circuits (ICs)

TC1426COA713

Active
Microchip Technology

MOSFET DRVR 1.2A 2-OUT LO SIDE INV 8-PIN SOIC N T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationTC1426COA713
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]1.2 A
Current - Peak Output (Source, Sink) [custom]1.2 A
Driven ConfigurationLow-Side
Gate TypeN-Channel, P-Channel MOSFET
Input TypeInverting
Logic Voltage - VIL, VIH0.8 V, 3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]25 ns
Rise / Fall Time (Typ) [custom]35 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]16 V
Voltage - Supply [Min]4.5 V

TC1426 Series

Dual 1.2 A MOSFET Gate Driver

PartVoltage - Supply [Min]Voltage - Supply [Max]Number of DriversCurrent - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Gate TypeLogic Voltage - VIL, VIHDriven ConfigurationRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Channel TypePackage / CasePackage / CasePackage / CaseOperating Temperature [Max]Operating Temperature [Min]Mounting TypeInput TypeSupplier Device PackagePackage / Case [y]Package / Case [x]Package / Case [custom]
PDIP / 8
Microchip Technology
4.5 V
16 V
2
1.2 A
1.2 A
N-Channel
P-Channel MOSFET
0.8 V
3 V
Low-Side
25 ns
35 ns
Independent
0.3 in
8-DIP
7.62 mm
70 °C
0 °C
Through Hole
Inverting
8-PDIP
SOIC / 8
Microchip Technology
4.5 V
16 V
2
1.2 A
1.2 A
N-Channel
P-Channel MOSFET
0.8 V
3 V
Low-Side
25 ns
35 ns
Independent
8-SOIC
70 °C
0 °C
Surface Mount
Inverting
8-SOIC
3.9 mm
0.154 in
8-MSOP
Microchip Technology
4.5 V
16 V
2
1.2 A
1.2 A
N-Channel
P-Channel MOSFET
0.8 V
3 V
Low-Side
25 ns
35 ns
Independent
3 mm
8-MSOP
8-TSSOP
70 °C
0 °C
Surface Mount
Inverting
8-MSOP
0.118 in
MOSFET DRVR 1.2A 2-OUT Lo Side Inv 8-Pin SOIC N T/R
Microchip Technology
4.5 V
16 V
2
1.2 A
1.2 A
N-Channel
P-Channel MOSFET
0.8 V
3 V
Low-Side
25 ns
35 ns
Independent
8-SOIC
70 °C
0 °C
Surface Mount
Inverting
8-SOIC
3.9 mm
0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.49
25$ 1.25
100$ 1.12
Digi-Reel® 1$ 1.49
25$ 1.25
100$ 1.12
Tape & Reel (TR) 3300$ 1.12
Microchip DirectT/R 1$ 1.49
25$ 1.25
100$ 1.12
1000$ 0.92
5000$ 0.87
10000$ 0.80
NewarkEach (Supplied on Full Reel) 100$ 1.16

Description

General part information

TC1426 Series

The TC1426/27/28 are a family of 1.2 A dual high-speed gate drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic transistor responsible for CMOS latch-up. They incorporate a number of other design and process refinements to increase their long-term reliability. The TC1426 is compatible with the bipolar DS0026, but only draws 1/5 of the quiescent current. The TC1426/27/28 are also compatible with the TC426/27/28, but with 1.2 A peak output current rather than the 1.5 A of the TC426/27/28 devices. Other compatible drivers are the TC4426/27/28 and the TC4426A/27A/28A. The TC4426/27/28 have the added feature that the inputs can withstand negative voltage up to 5 V with diode protection circuits. The TC4426A/27A/28A have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 ns range. All of the above drivers are pin compatible. The high-input impedance TC1426/27/28 drivers are CMOS/TTL input-compatible, do not require the speed-up needed by the bipolar devices, and can be directly driven by most PWM ICs. This family of devices is available in inverting and non-inverting versions. Specifications have been optimized to achieve low-cost and high-performance devices, well-suited for the high-volume manufacturer.