Discrete Semiconductor Products

IRFU9010PBF

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MOSFET P-CH 50V 5.3A TO251AA

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Discrete Semiconductor Products

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MOSFET P-CH 50V 5.3A TO251AA

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU9010PBF

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC
Input Capacitance (Ciss) (Max) @ Vds	240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFU9010PBF	500 mOhm	25 W	9.1 nC	TO-251AA	Through Hole	MOSFET (Metal Oxide)	20 V	-55 °C	150 °C	P-Channel	50 V	240 pF	5.3 A	IPAK TO-251-3 Short Leads TO-251AA	10 V	4 V

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General part information

P-Channel 50 V 5.3A (Tc) 25W (Tc) Through Hole TO-251AA

Technical documentation and resources