IRFU9010 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 50V 5.3A TO251AA
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Mounting Type | Technology | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 500 mOhm | 25 W | 9.1 nC | TO-251AA | Through Hole | MOSFET (Metal Oxide) | 20 V | -55 °C | 150 °C | P-Channel | 50 V | 240 pF | 5.3 A | IPAK TO-251-3 Short Leads TO-251AA | 10 V | 4 V |