Zenode.ai Logo
Beta
No image
Integrated Circuits (ICs)

LMG2100R044RARR

Active
Texas Instruments

100-V 4.4-MΩ HALF-BRIDGE GAN FET WITH INTEGRATED DRIVER AND PROTECTION

Deep-Dive with AI

Search across all available documentation for this part.

Integrated Circuits (ICs)

LMG2100R044RARR

Active
Texas Instruments

100-V 4.4-MΩ HALF-BRIDGE GAN FET WITH INTEGRATED DRIVER AND PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationLMG2100R044RARR
ApplicationsSynchronous Buck Converters
Current - Output / Channel35 A
Current - Peak Output125 A
Fault ProtectionUVLO
FeaturesBootstrap Circuit
InterfacePWM
Load TypeCapacitive, Inductive, Resistive
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case17-PowerVQFN
Rds On (Typ)4.4 mOhm
Supplier Device Package17-VQFN-FCRLF (5.5x4.5)
TechnologyNMOS
Voltage - Load [Max]90 V
Voltage - Load [Min]0 V
Voltage - Supply [Max]5.25 V
Voltage - Supply [Min]4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 7.81
10$ 6.70
100$ 5.58
500$ 4.92
1000$ 4.43
Digi-Reel® 1$ 7.81
10$ 6.70
100$ 5.58
500$ 4.92
1000$ 4.43
Tape & Reel (TR) 2500$ 4.15
Texas InstrumentsLARGE T&R 1$ 5.98
100$ 4.88
250$ 3.83
1000$ 3.25

Description

General part information

LMG2100R044 Series

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.