LMG2100R044 Series

100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

Catalog

100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

Part	Interface	Fault Protection	Features	Voltage - Load [Min]	Voltage - Load [Max]	Package / Case	Rds On (Typ)	Load Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Applications	Supplier Device Package	Technology	Current - Output / Channel	Mounting Type	Current - Peak Output
Texas Instruments LMG2100R044RARR	PWM	UVLO	Bootstrap Circuit	0 V	90 V	17-PowerVQFN	4.4 mOhm	Capacitive Inductive Resistive	4.75 V	5.25 V	125 °C	-40 °C	Synchronous Buck Converters	17-VQFN-FCRLF (5.5x4.5)	NMOS	35 A	Surface Mount	125 A

Catalog

100-V 4.4-mΩ half-bridge GaN FET with integrated driver and protection

Key Features

• Integrated 4.4mΩ half-bridge GaN FETs and driver90V continuous, 100V pulsed voltage ratingPackage optimized for easy PCB layoutHigh slew rate switching with low ringing5V external bias power supplySupports 3.3V and 5V input logic levelsGate driver capable of up to 10MHz switchingExcellent propagation delay (33ns typical) and matching (2ns typical)Internal bootstrap supply voltage clamping to prevent GaN FET OverdriveSupply rail undervoltage for lockout protectionLow power consumptionExposed top QFN package for top-side coolingLarge GND pad for bottom-side coolingIntegrated 4.4mΩ half-bridge GaN FETs and driver90V continuous, 100V pulsed voltage ratingPackage optimized for easy PCB layoutHigh slew rate switching with low ringing5V external bias power supplySupports 3.3V and 5V input logic levelsGate driver capable of up to 10MHz switchingExcellent propagation delay (33ns typical) and matching (2ns typical)Internal bootstrap supply voltage clamping to prevent GaN FET OverdriveSupply rail undervoltage for lockout protectionLow power consumptionExposed top QFN package for top-side coolingLarge GND pad for bottom-side cooling

Description

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs. The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG2100R044 device is available in a 5.5mm × 4.5mm × 0.89mm lead-free package and can be easily mounted on PCBs. The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.