Discrete Semiconductor Products
FDMS5672
ActiveON Semiconductor
N-CHANNEL ULTRAFET TRENCH<SUP>®</SUP> MOSFET 60V, 22A, 11.5MΩ
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Discrete Semiconductor Products
FDMS5672
ActiveON Semiconductor
N-CHANNEL ULTRAFET TRENCH<SUP>®</SUP> MOSFET 60V, 22A, 11.5MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS5672 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.6 A, 22 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.5 W, 78 W |
| Rds On (Max) @ Id, Vgs [Max] | 11.5 mOhm |
| Supplier Device Package | 8-MLP (5x6), Power56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.62 | |
| 10 | $ 3.06 | |||
| 100 | $ 2.17 | |||
| 500 | $ 1.79 | |||
| 1000 | $ 1.70 | |||
| Digi-Reel® | 1 | $ 4.62 | ||
| 10 | $ 3.06 | |||
| 100 | $ 2.17 | |||
| 500 | $ 1.79 | |||
| 1000 | $ 1.70 | |||
| Tape & Reel (TR) | 3000 | $ 1.70 | ||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 2.04 | |
| 6000 | $ 1.91 | |||
| 12000 | $ 1.77 | |||
| 18000 | $ 1.70 | |||
| 30000 | $ 1.68 | |||
| ON Semiconductor | N/A | 1 | $ 1.56 | |
Description
General part information
FDMS5672 Series
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Documents
Technical documentation and resources