Discrete Semiconductor Products

SQS462EN-T1_GE3

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MOSFET N-CH 60V 8A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQS462EN-T1_GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max) [Max]	33 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Technology	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SQS462EN-T1_GE3	2.5 V	33 W	4.5 V 10 V	63 mOhm	60 V	PowerPAK® 1212-8	12 nC	Surface Mount	-55 °C	175 ░C	Automotive	MOSFET (Metal Oxide)	PowerPAK® 1212-8	N-Channel	8 A	AEC-Q101	470 pF	20 V

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General part information

N-Channel 60 V 8A (Tc) 33W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources