SQS462 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 8A PPAK1212-8
| Part | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Technology | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Qualification | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.5 V | 33 W | 4.5 V 10 V | 63 mOhm | 60 V | PowerPAK® 1212-8 | 12 nC | Surface Mount | -55 °C | 175 ░C | Automotive | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | N-Channel | 8 A | AEC-Q101 | 470 pF | 20 V |