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ONSEMI FDD6685
Discrete Semiconductor Products

FDD6685

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 40 A, 0.014 OHM, TO-252 (DPAK), SURFACE MOUNT

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ONSEMI FDD6685
Discrete Semiconductor Products

FDD6685

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 30 V, 40 A, 0.014 OHM, TO-252 (DPAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDD6685
Current - Continuous Drain (Id) @ 25°C11 A, 40 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]24 nC
Input Capacitance (Ciss) (Max) @ Vds1715 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]52 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.16
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Digi-Reel® 1$ 1.16
10$ 0.95
100$ 0.74
500$ 0.63
1000$ 0.51
Tape & Reel (TR) 2500$ 0.48
5000$ 0.46
12500$ 0.44
NewarkEach (Supplied on Full Reel) 1$ 0.60
3000$ 0.58
6000$ 0.53
12000$ 0.47
18000$ 0.46
30000$ 0.44
ON SemiconductorN/A 1$ 0.47

Description

General part information

FDD6680AS Series

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDD6680AS includes an integrated Schottky diode using a monolithic SyncFET™ technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.