Specification	FDD6680AS

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDD6680AS Series

N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FDD6680	18 nC	TO-252 (DPAK)	3 V	10 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	12 A 46 A	1230 pF	3.3 W 56 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6680	18 nC	TO-252AA	3 V	10 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	12 A 46 A	1230 pF	3.3 W 56 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6688S	81 nC	TO-252 (DPAK)	3 V	5.1 mOhm	Surface Mount	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	88 A	3290 pF	69 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6680AS	29 nC	TO-252AA	3 V	10.5 mOhm	Surface Mount	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	55 A	1200 pF	60 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6688	56 nC	TO-252 (DPAK)	3 V	5 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	84 A	3845 pF	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6682	31 nC	TO-252AA	3 V	6.2 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	75 A	2400 pF	71 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6682	31 nC	TO-252 (DPAK)	3 V	6.2 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	75 A	2400 pF	71 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6688	56 nC	TO-252AA	3 V	5 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	84 A	3845 pF	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V
ON Semiconductor FDD6685		TO-252AA	3 V	20 mOhm	Surface Mount	30 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	11 A 40 A	1715 pF		DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	P-Channel	25 V	24 nC	52 W
ON Semiconductor FDD6688S	81 nC	TO-252AA	3 V	5.1 mOhm	Surface Mount	30 V	-55 °C	150 °C	MOSFET (Metal Oxide)	88 A	3290 pF	69 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V 10 V	N-Channel	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	528	$ 0.57
		528	$ 0.57

Description

General part information

FDD6680AS Series

The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDD6680AS includes an integrated Schottky diode using a monolithic SyncFET™ technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.