Discrete Semiconductor Products

SCT060HU75G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 58 MOHM TYP., 30 A IN AN HU3PAK PACKAGE

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Documents TN1378 +24

Discrete Semiconductor Products

SCT060HU75G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 750 V, 58 MOHM TYP., 30 A IN AN HU3PAK PACKAGE

Deep-Dive with AI

Documents TN1378 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT060HU75G3AG

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds	680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	185 W
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	HU3PAK
Vgs (Max)	4.2 V
Vgs(th) (Max) @ Id	4.2 V

SCT060HU75G3AG Series

Automotive-grade silicon carbide Power MOSFET 750 V, 58 mOhm typ., 30 A in an HU3PAK package

Part	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
STMicroelectronics SCT060HU75G3AG	78 mOhm	N-Channel	4.2 V	30 A	Surface Mount	185 W	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	680 pF	HU3PAK	4.2 V	29 nC	15 V 18 V	-55 °C	175 ░C	750 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 15.29
		10	$ 10.78
		100	$ 8.22
	Digi-Reel®	1	$ 15.29
		10	$ 10.78
		100	$ 8.22
	Tape & Reel (TR)	600	$ 7.94
Newark	Each (Supplied on Cut Tape)	1	$ 11.64
		10	$ 9.75
		25	$ 9.26
		50	$ 8.81
		100	$ 8.39
		250	$ 8.08
		500	$ 7.83
		1000	$ 7.65

Description

General part information

SCT060HU75G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rdgeneration SiC MOSFET technology. The device features a very low RDS(on)over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.