STD5NM60-1
ActiveN-CHANNEL 600 V, 0.9 OHM TYP., 5 A MDMESH POWER MOSFET IN AN IPAK PACKAGE
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STD5NM60-1
ActiveN-CHANNEL 600 V, 0.9 OHM TYP., 5 A MDMESH POWER MOSFET IN AN IPAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD5NM60-1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 18 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 400 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) | 96 W |
| Rds On (Max) @ Id, Vgs | 1 Ohm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD5NM60 Series
The MDmesh is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.100% avalanche testedHIgh dv/dt and avalanche capabilitiesLow input capacitance and gate chargeLow gate input resistance
Documents
Technical documentation and resources
