Discrete Semiconductor Products

SI4455DY-T1-E3

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MOSFET P-CH 150V 2.8A 8SO

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Discrete Semiconductor Products

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MOSFET P-CH 150V 2.8A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4455DY-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	5.9 W, 3.1 W
Rds On (Max) @ Id, Vgs	295 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4455DY-T1-GE3	295 mOhm	8-SOIC	-55 °C	150 °C	2 A	8-SOIC	3.9 mm	0.154 in	4 V	150 V	5.9 W	20 V	6 V 10 V	1190 pF	Surface Mount	P-Channel	MOSFET (Metal Oxide)	42 nC
Vishay General Semiconductor - Diodes Division SI4455DY-T1-E3	295 mOhm	8-SOIC	-55 °C	150 °C	2.8 A	8-SOIC	3.9 mm	0.154 in	4 V	150 V	3.1 W 5.9 W	20 V	10 V	1190 pF	Surface Mount	P-Channel	MOSFET (Metal Oxide)	42 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 2.8A (Tc) 3.1W (Ta), 5.9W (Tc) Surface Mount 8-SOIC

Technical documentation and resources